FQD7P06 mosfet equivalent, 60v p-channel mosfet.
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* -5.4A, -60V, RDS(on) = 0.45Ω @VGS = -10 V Low gate charge ( typical 6.3 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanche te.
such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operate.
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.
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