FQD7P20 Overview
Key Specifications
Package: DPAK
Mount Type: Surface Mount
Pins: 3
Height: 2.517 mm
Description
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
Key Features
- 5.7 A, -200 V, RDS(on) = 690 mΩ (Max.) @ VGS = -10 V, ID = -2.85 A
- Low Gate Charge (Typ. 19 nC)
- Low Crss (Typ. 25 pF)
- 100% Avalanche Tested S D G G S D-PAK D
