FQD7P20 Datasheet and Specifications PDF

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to .

* -5.7 A, -200 V, RDS(on) = 690 mΩ (Max.) @ VGS = -10 V, ID = -2.85 A
* Low Gate Charge (Typ. 19 nC)
* Low Crss (Typ. 25 pF)
* 100% Avalanche Tested S D G G S D-PAK D Absolute Maximum Ratings TC = 25°C unless otherwise noted.  +
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·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-C.

*Drain Current
*ID= -5.7A@ TC=25℃
*Drain Source Voltage- : VDSS= -200V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 0.69Ω(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
*Designed for use in switch mode power supplie.

This P−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state r.

*
*5.7 A,
*200 V, RDS(on) = 690 mΩ (Max.) @ VGS =
*10 V, ID =
*2.85 A
* Low Gate Charge (Typ. 19 nC)
* Low Crss (Typ. 25 pF)
* 100% Avalanche Tested ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise noted) Symbol Parameter Ratings Unit VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain
*Source Voltag.