FQD7P20 - P-Channel MOSFET

onsemi

General Description

This P

using onsemi’s proprietary planar stripe and DMOS technology.

state resistance, and to provide superior switching performance and high avalanche energy s

Key Features

5.7 A,.
200 V, RDS(on) = 690 mΩ (Max. ) @ VGS =.
10 V, ID =.
2.85 A.
Low Gate Charge (Typ. 19 nC).
Low Crss (Typ. 25 pF).
100% Avalanche Tested.

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FQD7P20 p-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FQD7P20
Manufacturer	onsemi
File Size	231.76 KB
Description	P-Channel MOSFET
Datasheet	FQD7P20 Datasheet

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MOSFET – P-Channel, QFET -200 V, -5.7 A, 690 mW FQD7P20 Description This P−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. Features • −5.7 A, −200 V, RDS(on) = 690 mΩ (Max.) @ VGS = −10 V, ID = −2.85 A • Low Gate Charge (Typ. 19 nC) • Low Crss (Typ.