Datasheet4U Logo Datasheet4U.com

FQD7P20 - P-Channel MOSFET

General Description

purpose applications.

Key Features

  • Drain Current.
  • ID= -5.7A@ TC=25℃.
  • Drain Source Voltage- : VDSS= -200V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 0.69Ω(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FQD7P20 200V P-Channel MOSFET Fairchild Semiconductor
FQD7P20 P-Channel MOSFET ON Semiconductor
FQD7P06 60V P-Channel MOSFET Fairchild Semiconductor
FQD7N10 100V N-Channel MOSFET Fairchild Semiconductor
FQD7N10L 100V LOGIC N-Channel MOSFET Fairchild Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number Description
FQD13N10 N-Channel MOSFET
FQD50N06 N-Channel MOSFET
FQD50P06 P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc P-Channel MOSFET Transistor FEATURES ·Drain Current –ID= -5.7A@ TC=25℃ ·Drain Source Voltage- : VDSS= -200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.69Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous -200 V ±30 V ID Drain Current-Continuous -5.7 A IDM Drain Current-Single Pluse -22.8 A PD Total Dissipation @TC=25℃ 55 W TJ Max.