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FQD7P20 - 200V P-Channel MOSFET

Description

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Features

  • -5.7 A, -200 V, RDS(on) = 690 mΩ (Max. ) @ VGS = -10 V, ID = -2.85 A.
  • Low Gate Charge (Typ. 19 nC).
  • Low Crss (Typ. 25 pF).
  • 100% Avalanche Tested S D G G S D-PAK D Absolute Maximum Ratings TC = 25°C unless otherwise noted.  + 6 6 + ; 6 ; !$          +             3-)&74   3-1.
  • 74   :  +      (! ; .

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FQD7P20 — P-Channel QFET® MOSFET FQD7P20 P-Channel QFET® MOSFET -200 V, -5.7 A, 690 mΩ November 2013 Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. Features • -5.7 A, -200 V, RDS(on) = 690 mΩ (Max.) @ VGS = -10 V, ID = -2.85 A • Low Gate Charge (Typ. 19 nC) • Low Crss (Typ.
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