*
*
*
*
*
* 9.3A, 80V, RDS(on) = 0.21Ω @VGS = 10 V Low gate charge ( typical 5.9 nC) Low Crss ( typical 13 pF) Fast switching 100% avalanche teste.

such as automotive, high efficiency switching for DC/DC converters, and DC motor control. TM Features
*
*
.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching pe.

FQD9N08L

FQD9N15

FQD9N25

FQD10N20

FQD10N20C

FQD10N20L

FQD11P06

FQD12N06

FQD12N20

FQD12N20L

FQD12N20LTM_F085

FQD12P10

FQD12P10TM-F085