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Fairchild Semiconductor Electronic Components Datasheet

FQD9N08 Datasheet

80V N-Channel MOSFET

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FQD9N08 / FQU9N08
80V N-Channel MOSFET
December 2000
QFETTM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize
on-state resistance, provide superior switching
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are
well suited for low voltage applications such as automotive,
high efficiency switching for DC/DC converters, and DC
motor control.
Features
• 9.3A, 80V, RDS(on) = 0.21@VGS = 10 V
• Low gate charge ( typical 5.9 nC)
• Low Crss ( typical 13 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
GS
D-PAK
FQD Series
GDS
I-PAK
FQU Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25°C) *
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8from case for 5 seconds
D
!
"
!"
G!
"
"
!
S
FQD9N08 / FQU9N08
80
7.4
4.68
29.6
± 25
55
7.4
2.5
6.5
2.5
25
0.2
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθJA
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
©2000 Fairchild Semiconductor International
Typ Max Units
-- 5.0 °C/W
-- 50 °C/W
-- 110 °C/W
Rev. A2, December 2000


Fairchild Semiconductor Electronic Components Datasheet

FQD9N08 Datasheet

80V N-Channel MOSFET

No Preview Available !

Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
80 -- -- V
ID = 250 µA, Referenced to 25°C -- 0.08 -- V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 80 V, VGS = 0 V
VDS = 64 V, TC = 125°C
-- -- 1 µA
-- -- 10 µA
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V
-- -- 100 nA
-- -- -100 nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
2.0 --
4.0
VGS = 10 V, ID = 3.7 A
-- 0.16 0.21
VDS = 30 V, ID = 3.7 A (Note 4) --
3.5
--
V
S
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 190 250
-- 70
90
-- 13
17
pF
pF
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 40 V, ID = 9.3 A,
RG = 25
(Note 4, 5)
VDS = 64 V, ID = 9.3 A,
VGS = 10 V
(Note 4, 5)
--
--
--
--
--
--
--
2.8 15pp
28 65
9 28
17 45
5.9 7.7
1.5 --
2.6 --
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 7.4 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 9.3 A,
dIF / dt = 100 A/µs
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 1.38mH, IAS = 7.4A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 9.3A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
--
--
--
--
--
-- 7.4
-- 29.6
-- 1.5
50 --
70 --
A
A
V
ns
nC
©2000 Fairchild Semiconductor International
Rev. A2, December 2000


Part Number FQD9N08
Description 80V N-Channel MOSFET
Maker Fairchild Semiconductor
Total Page 9 Pages
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