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FQD9N08L - 80V LOGIC N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Key Features

  • 7.4A, 80V, RDS(on) = 0.21Ω @VGS = 10 V Low gate charge ( typical 4.7 nC) Low Crss ( typical 16 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating Low level gate drive requirements allowing direct operation from logic drives D D ! " G! G S ! " " " D-PAK FQD Series I-PAK G D S FQU Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv.

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FQD9N08L / FQU9N08L December 2000 QFET FQD9N08L / FQU9N08L 80V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control. TM Features • • • • • • • • 7.4A, 80V, RDS(on) = 0.21Ω @VGS = 10 V Low gate charge ( typical 4.