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Fairchild Semiconductor Electronic Components Datasheet

FQG4902 Datasheet

250V Dual N & P-Channel MOSFET

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FQG4902
250V Dual N & P-Channel MOSFET
QFET TM
General Description
These dual N and P-channel enhancement mode power
field effect transistors are produced using Fairchild’s
proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for electronic lamp ballast based on half bridge.
Features
• N-Channel 0.54A, 250V, RDS(on) = 2.0 @ VGS = 10 V
P-Channel -0.54A, -250V, RDS(on) = 2.0 @ VGS = -10 V
• Low gate charge ( typical N-Channel 6.0 nC)
( typical P-Channel 12.0 nC)
• Fast switching
• Improved dv/dt capability
D2
D2
D1
D1
G2
S2
G1
S1
8-DIP Pin #1
5
6
7
8
4
3
2
1
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
dv/dt
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TA = 25°C)
- Continuous (TA = 100°C)
Drain Curent - Pulsed
Gate-Source Voltage
Peak Diode Recovery dv/dt
Power Dissipation (TA = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
(Note 1)
(Note 2)
N-Channel
P-Channel
250 -250
0.54 -0.54
0.34 -0.34
4.32 -4.32
± 30
5.5 -5.5
1.4
0.011
-55 to +150
Thermal Characteristics
Symbol
RθJA
Parameter
Thermal Resistance, Junction-to-Ambient
(Note 5a)
Typ
--
Max
90
Units
V
A
A
A
V
V/ns
W
W/°C
°C
Units
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. A1, April 2002


Fairchild Semiconductor Electronic Components Datasheet

FQG4902 Datasheet

250V Dual N & P-Channel MOSFET

No Preview Available !

Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Type Min Typ Max Units
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
BVDSS Breakdown Voltage Temperature
/ TJ Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 µA
VGS = 0 V, ID = -250 µA
ID = 250 µA,
Referenced to 25°C
ID = -250 µA,
Referenced to 25°C
VDS = 250 V, VGS = 0 V
VDS = 200 V, TA = 125°C
VDS = -250 V, VGS = 0 V
VDS = -200 V, TA = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
N-Ch 250
P-Ch -250
--
--
N-Ch -- 0.24
--
--
--
V
V
V/°C
P-Ch -- -0.2 -- V/°C
N-Ch
P-Ch
All
All
--
--
--
--
--
--
-- 10 µA
-- 100 µA
-- -10 µA
-- -100 µA
-- 100 nA
-- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on) Static Drain-Source On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
VDS = VGS, ID = -250 µA
VGS = 10 V, ID = 0.27 A
VGS = -10 V, ID = -0.27 A
VDS = 40 V, ID = 0.27 A
VDS = -40 V, ID = -0.27 A
N-Ch 2.0 -- 4.0
P-Ch -2.0 -- -4.0
N-Ch -- 1.1 2.0
P-Ch -- 1.5 2.0
N-Ch -- 1.3 --
P-Ch -- 1.1 --
V
V
S
S
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
N-Channel
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
P-Channel
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
N-Ch -- 195 250 pF
P-Ch -- 345 445 pF
N-Ch -- 40 55 pF
P-Ch -- 65 85 pF
N-Ch --
7 9.5 pF
P-Ch -- 11 14.5 pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
N-Channel
N-Ch -- 5.5 20
VDD = 125 V, ID = 0.54 A, P-Ch -- 8.0 25
RG = 25
N-Ch -- 17 45
P-Ch -- 19 50
ns
ns
ns
ns
P-Channel
N-Ch --
29 70
ns
VDD = -125 V, ID = -0.54 A,
RG = 25
(Note 3,4)
P-Ch
N-Ch
P-Ch
--
--
--
44 100
23 55
33 75
ns
ns
ns
N-Channel
N-Ch -- 6.0 7.8 nC
VDS = 200 V, ID = 0.54 A, P-Ch -- 12.0 15.6 nC
VGS = 10 V
N-Ch -- 1.1 --
nC
P-Channel
P-Ch -- 2.2 --
nC
VDS = -200 V, ID = -0.54 A, N-Ch -- 2.7 --
VGS = -10 V
(Note 3,4) P-Ch -- 5.3 --
nC
nC
©2002 Fairchild Semiconductor Corporation
Rev. A1, April 2002


Part Number FQG4902
Description 250V Dual N & P-Channel MOSFET
Maker Fairchild Semiconductor
Total Page 12 Pages
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