FQG4902
Overview
These dual N and P-channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
- N-Channel 0.54A, 250V, RDS(on) = 2.0 Ω @ VGS = 10 V P-Channel -0.54A, -250V, RDS(on) = 2.0 Ω @ VGS = -10 V
- Low gate charge ( typical N-Channel 6.0 nC) ( typical P-Channel 12.0 nC)
- Fast switching
- Improved dv/dt capability
