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FQH70N10 - MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 70A, 100V, RDS(on) = 0.023Ω @VGS = 10 V.
  • Low gate charge ( typical 85 nC).
  • Low Crss ( typical 150 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • 175°C maximum junction temperature rating GD S TO-247 FQH Series D ! " !" G! " " ! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source.

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Full PDF Text Transcription

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FQH70N10 FQH70N10 100V N-Channel MOSFET QFET® General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. Features • 70A, 100V, RDS(on) = 0.
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