FQH44N10_F133 Overview
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for low voltage applications such as audio amplifier,...
FQH44N10_F133 Key Features
- 48A, 100V, RDS(on) = 0.039Ω @VGS = 10 V
- Low gate charge ( typical 48 nC)
- Low Crss ( typical 85 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- 175°C maximum junction temperature rating