FQH70N10 - MOSFET

Product Overview

Fairchild Semiconductor

Part number	FQH70N10
Manufacturer	Fairchild Semiconductor
File Size	662.93 KB
Description	MOSFET
Datasheet	FQH70N10 Datasheet
Additional preview pages of the FQH70N10 datasheet.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

70A, 100V, RDS(on) = 0.023Ω @VGS = 10 V.
Low gate charge ( typical 85 nC).
Low Crss ( typical 150 pF).
Fast switching.
100% avalanche tested.
Improved dv/dt capability.
175°C maximum junction temperature rating GD S TO-247 FQH Series D ! " !" G! " " ! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source.

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Published: Jan 16, 2017 |