FQI11N40 Datasheet | Fairchild Semiconductor

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supply, electronic lamp ballast based on half bridge. Features - - - - - - 11.4A, 400V, RDS(on) = 0.48Ω @VGS = 10 V Low gate charge ( typical 27 n C) Low Crss ( typical 20 p F) Fast switching 100% avalanche tested Improved dv/dt capability ! " G! G S ! " " " D2-PAK FQB Series I2-PAK FQI Series ! Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB11N40 / FQI11N40 400 11.4 7.2 46 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V m J A m J V W W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) - 520 11.4 14.7 4.5 3.13 147 1.18 -55 to +150 300 TJ, TSTG TL Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Characteristics Symbol RθJC RθJA RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient - Thermal Resistance, Junction-to-Ambient Typ ---Max 0.85 40 62.5 Units °C/W °C/W °C/W - When mounted on the minimum pad size remended (PCB...