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Fairchild Semiconductor Electronic Components Datasheet

FQI11N40 Datasheet

400V N-Channel MOSFET

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November 2001
FQB11N40 / FQI11N40
400V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply,
electronic lamp ballast based on half bridge.
Features
• 11.4A, 400V, RDS(on) = 0.48@VGS = 10 V
• Low gate charge ( typical 27 nC)
• Low Crss ( typical 20 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
GS
D2-PAK
FQB Series
GDS
I2-PAK
FQI Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25°C) *
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
D
!
"
!"
G!
"
"
!
S
FQB11N40 / FQI11N40
400
11.4
7.2
46
± 30
520
11.4
14.7
4.5
3.13
147
1.18
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
Parameter
RθJC
RθJA
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ Max Units
-- 0.85 °C/W
-- 40 °C/W
-- 62.5 °C/W
©2001 Fairchild Semiconductor Corporation
Rev. B, November 2001


Fairchild Semiconductor Electronic Components Datasheet

FQI11N40 Datasheet

400V N-Channel MOSFET

No Preview Available !

Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
400 --
ID = 250 µA, Referenced to 25°C -- 0.42
IDSS
Zero Gate Voltage Drain Current
VDS = 400 V, VGS = 0 V
VDS = 320 V, TC = 125°C
-- --
-- --
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
-- --
-- --
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
3.0 --
5.0
VGS = 10 V, ID = 5.7 A
-- 0.38 0.48
VDS = 50 V, ID = 5.7 A (Note 4) --
7.6
--
V
S
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 1100 1400
-- 180 240
-- 20
30
pF
pF
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 200 V, ID = 11.4 A,
RG = 25
(Note 4, 5)
VDS = 320 V, ID = 11.4 A,
VGS = 10 V
(Note 4, 5)
--
--
--
--
--
--
--
30
100
60
60
27
7.3
12.3
70
210
130
130
35
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 11.4 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 11.4 A,
dIF / dt = 100 A/µs
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 7mH, IAS = 11.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 11.4A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
--
--
--
--
--
-- 11.4
-- 46
-- 1.5
240 --
1.8 --
A
A
V
ns
µC
©2001 Fairchild Semiconductor Corporation
Rev. B, November 2001


Part Number FQI11N40
Description 400V N-Channel MOSFET
Maker Fairchild Semiconductor
Total Page 9 Pages
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