FQI11N40C Datasheet PDF - Fairchild Semiconductor 400V N-Channel MOSFET Specs

FQI11N40C - 400V N-Channel MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

10.5 A, 400V, RDS(on) = 0.5 Ω @VGS = 10 V Low gate charge ( typical 28 nC) Low Crss ( typical 85pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S D2-PAK FQB Series I2-PAK G D S FQI Series G! ! " " " ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuo.

Datasheet Details

Part number	FQI11N40C
Manufacturer	Fairchild Semiconductor
File Size	659.63 KB
Description	400V N-Channel MOSFET
Datasheet	FQI11N40C Datasheet
Additional preview pages of the FQI11N40C datasheet.

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Full PDF Text Transcription

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FQB11N40C/FQI11N40C QFET www.datasheet4u.com ® FQB11N40C/FQI11N40C 400V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. Features • • • • • • 10.5 A, 400V, RDS(on) = 0.

Published: May 22, 2009 |