FQI11N40 Datasheet PDF - Fairchild Semiconductor 400V N-Channel MOSFET Specs

FQI11N40 - 400V N-Channel MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

11.4A, 400V, RDS(on) = 0.48Ω @VGS = 10 V Low gate charge ( typical 27 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G! G S ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°.

Datasheet Details

Part number	FQI11N40
Manufacturer	Fairchild Semiconductor
File Size	566.93 KB
Description	400V N-Channel MOSFET
Datasheet	FQI11N40 Datasheet
Additional preview pages of the FQI11N40 datasheet.

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Full PDF Text Transcription

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FQB11N40 / FQI11N40 November 2001 FQB11N40 / FQI11N40 400V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, electronic lamp ballast based on half bridge. Features • • • • • • 11.4A, 400V, RDS(on) = 0.

Published: Apr 1, 2005 |