FQI11N40 Datasheet | Fairchild Semiconductor

FQB11N40 / FQI11N40 November 2001 FQB11N40 / FQI11N40 400V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supply, electronic lamp ballast based on half bridge. Features - - - - - - 11.4A, 400V, RDS(on) = 0.48Ω @VGS = 10 V Low gate charge ( typical 27 nC) Low Crss ( typical 20 pF) Fast switching...