*
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*
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* 65A, 60V, RDS(on) = 0.016Ω @VGS = 10 V Low gate charge ( typical 48 nC) Low Crss ( typical 100 pF) Fast switching 100% avalanche.

such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operat.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

FQI630

FQI6N15

FQI6N25

FQI6N40

FQI6N40C

FQI6N45

FQI6N50

FQI6N60

FQI6N70

FQI6N80

FQI6N90

FQI6P25

FQI10N20