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* 5.8A, 900V, RDS(on) = 1.9Ω @VGS = 10 V Low gate charge ( typical 40 nC) Low Crss ( typical 17 pF) Fast switching 100% avalanche tested.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching pe.

FQI6N15

FQI6N25

FQI6N40

FQI6N40C

FQI6N45

FQI6N50

FQI6N60

FQI6N70

FQI6N80

FQI630

FQI65N06

FQI6P25

FQI10N20