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FQI7N10 Datasheet, Fairchild Semiconductor

FQI7N10 Datasheet, Fairchild Semiconductor

FQI7N10

datasheet Download (Size : 548.34KB)

FQI7N10 Datasheet

FQI7N10 mosfet equivalent, 100v n-channel mosfet.

FQI7N10

datasheet Download (Size : 548.34KB)

FQI7N10 Datasheet

Features and benefits


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* 7.3A, 100V, RDS(on) = 0.35Ω @VGS = 10 V Low gate charge ( typical 5.8 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanch.

Application

such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control. D TM Features
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Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching pe.

Image gallery

FQI7N10 Page 1 FQI7N10 Page 2 FQI7N10 Page 3

TAGS

FQI7N10
100V
N-Channel
MOSFET
Fairchild Semiconductor

Manufacturer


Fairchild Semiconductor

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