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* 9.3A, 80V, RDS(on) = 0.21Ω @VGS = 10 V Low gate charge ( typical 5.9 nC) Low Crss ( typical 13 pF) Fast switching 100% avalanche.

such as automotive, high efficiency switching for DC/DC converters, and DC motor control. D TM Features
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These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching pe.

FQI9N08L

FQI9N15

FQI9N25

FQI9N30

FQI9N50C

FQI90N08

FQI9P25

FQI10N20

FQI10N20C

FQI10N20L

FQI10N60C

FQI11N40

FQI11N40C