Download the FQP11N50CF datasheet PDF.
This datasheet also covers the FQPF11N50CF variant, as both devices belong to the same 500v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
Note: The manufacturer provides a single datasheet file (FQPF11N50CF_FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for FQP11N50CF (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
FQP11N50CF. For precise diagrams, and layout, please refer to the original PDF.
FQP11N50CF/FQPF11N50CF 500V N-Channel MOSFET July 2005 FRFET FQP11N50CF/FQPF11N50CF 500V N-Channel MOSFET Features • 11A, 500V, RDS(on) = 0.55Ω @VGS = 10 V • Low Gate Cha...
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OSFET Features • 11A, 500V, RDS(on) = 0.55Ω @VGS = 10 V • Low Gate Charge (typical 43 nC) • Low Crss (typical 20pF) • Fast Switching • 100% Avalanche Tested www.DataSheet4U.com • Improved dv/dt Capability • Fast Recovery Body Diode (typical 90ns) TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
FQP11N50CF Datasheet
