FQP11N50CF Key Features
- 11A, 500V, RDS(on) = 0.55Ω @VGS = 10 V
- Low Gate Charge (typical 43 nC)
- Low Crss (typical 20pF)
- Fast Switching
- 100% Avalanche Tested
- Improved dv/dt Capability
- Fast Recovery Body Diode (typical 90ns)
- Part: FQP11N50CF
- Manufacturer: Fairchild (official site)
- Size: 816.64 KB
Related Fairchild Datasheets
| Part Number | Description |
|---|---|
| FQP11N40 | 400V N-Channel MOSFET |
| FQP11N40C | 400V N-Channel MOSFET |
| FQP11P06 | 60V P-Channel MOSFET |
| FQP10N20 | 200V N-Channel MOSFET |
| FQP10N20C | 200V N-Channel MOSFET |
FQP11N50CF Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies,...