Datasheet4U Logo Datasheet4U.com

FQP11P06 - 60V P-Channel MOSFET

General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology.

Key Features

  • -11.4 A, -60 V, RDS(on) = 175 mΩ (Max. ) @ VGS = -10 V, ID = -5.7 A.
  • Low Gate Charge (Typ. 13 nC).
  • Low Crss (Typ. 45 pF).
  • 100% Avalanche Tested.
  • 175oC Maximum Junction Temperature Rating S G GDS TO-220 Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed (Note.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FQP10N20 N-Channel 200V MOSFET VBsemi
FQP10N20C N-Channel MOSFET INCHANGE
FQP10N60 N-Channel MOSFET Oucan Semi
FQP10N65 10A N-Channel MOSFET Oucan Semi
FQP12N50 12A N-Channel MOSFET Oucan Semi

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FQP11N40 400V N-Channel MOSFET
FQP11N40C 400V N-Channel MOSFET
FQP11N50CF 500V N-Channel MOSFET
FQP10N20 200V N-Channel MOSFET
FQP10N20C 200V N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FQP11P06 — P-Channel QFET® MOSFET FQP11P06 P-Channel QFET® MOSFET -60 V, -11.4 A, 175 mΩ November 2013 Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products. Features • -11.4 A, -60 V, RDS(on) = 175 mΩ (Max.) @ VGS = -10 V, ID = -5.7 A • Low Gate Charge (Typ. 13 nC) • Low Crss (Typ.