FQP11P06 Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and mutation modes. These devices are well suited for low voltage applications such as automotive,...
FQP11P06 Key Features
- 11.4 A, -60 V, RDS(on) = 175 mΩ (Max.) @ VGS = -10 V, ID = -5.7 A
- Low Gate Charge (Typ. 13 nC)
- Low Crss (Typ. 45 pF)
- 100% Avalanche Tested
- 175oC Maximum Junction Temperature Rating