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FQP11N50CF - 500V N-Channel MOSFET

Download the FQP11N50CF datasheet PDF. This datasheet also covers the FQPF11N50CF variant, as both devices belong to the same 500v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Key Features

  • 11A, 500V, RDS(on) = 0.55Ω @VGS = 10 V.
  • Low Gate Charge (typical 43 nC).
  • Low Crss (typical 20pF).
  • Fast Switching.
  • 100% Avalanche Tested www. DataSheet4U. com.
  • Improved dv/dt Capability.
  • Fast Recovery Body Diode (typical 90ns) TM.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FQPF11N50CF_FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Fairchild (now onsemi)

Part Number Description
FQP11N40 400V N-Channel MOSFET
FQP11N40C 400V N-Channel MOSFET
FQP11P06 60V P-Channel MOSFET
FQP10N20 200V N-Channel MOSFET
FQP10N20C 200V N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FQP11N50CF/FQPF11N50CF 500V N-Channel MOSFET July 2005 FRFET FQP11N50CF/FQPF11N50CF 500V N-Channel MOSFET Features • 11A, 500V, RDS(on) = 0.55Ω @VGS = 10 V • Low Gate Charge (typical 43 nC) • Low Crss (typical 20pF) • Fast Switching • 100% Avalanche Tested www.DataSheet4U.com • Improved dv/dt Capability • Fast Recovery Body Diode (typical 90ns) TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.