FQP13N50C datasheet, mosfet equivalent, Fairchild Semiconductor

datasheet Download (Size : 1.07MB)

Features and benefits

* 13 A, 500 V, RDS(on) = 480 mΩ (Max.) @ VGS = 10 V, ID = 6.5 A
* Low Gate Charge (Typ. 43 nC)
* Low Crss (Typ. 20 pF)
* 100% Avalanche Tested D GDS TO.

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switchi.

Image gallery