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* 13A, 60V, RDS(on) = 0.135Ω @VGS = 10 V Low gate charge ( typical 5.8 nC) Low Crss ( typical 15 pF) Fast switching 100% avalanche.

such as DC/DC converters, high efficiency switching for power management in portable and battery operated products. TM .

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

FQP13N06L

FQP13N10

FQP13N10L

FQP13N50

FQP13N50C

FQP13N50CF

FQP10N20

FQP10N20C

FQP10N20L

FQP10N50CF

FQP10N60

FQP10N60C

FQP10N60CF