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FQP13N10L Datasheet Preview

FQP13N10L Datasheet

N-Channel MOSFET

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isc N-Channel MOSFET Transistor
·FEATURES
·With low gate drive requirements
·Easy to drive
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
INCHANGE Semiconductor
FQP13N10L
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
100
VGSS
ID
IDM
Gate-Source Voltage
Drain Current-Continuous@TC=25
TC=100
Drain Current-Single Pulsed
±20
12.8
9.05
51.2
PD
Total Dissipation
65
Tj
Operating Junction Temperature
-55~175
Tstg
Storage Temperature
-55~175
UNIT
V
V
A
A
W
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX
2.31
62.5
UNIT
/W
/W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark




INCHANGE

FQP13N10L Datasheet Preview

FQP13N10L Datasheet

N-Channel MOSFET

No Preview Available !

isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
FQP13N10L
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA
VGS(th)
Gate Threshold Voltage
RDS(on)
Drain-Source On-Resistance
IGSS
Gate-Source Leakage Current
IDSS
Drain-Source Leakage Current
VSDF
Diode forward voltage
VDS=±20V; ID=0.25mA
VGS= 10V; ID=6.4A
VGS= 5V; ID=6.4A
VGS= ±20V;VDS= 0V
VDS= 100V; VGS= 0V;
VDS= 80V; VGS= 0V;
ISD=12.8A, VGS = 0 V
100
V
1
2
V
142 180
158 200
mΩ
±0.1 μA
1
10
μA
1.5
V
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark



Part Number FQP13N10L
Description N-Channel MOSFET
Maker INCHANGE
Total Page 2 Pages
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FQP13N10L Datasheet PDF





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