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FQP13N10L - N-Channel MOSFET

FQP13N10L Description

isc N-Channel MOSFET Transistor *.

FQP13N10L Features

* With low gate drive requirements
* Easy to drive
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor FQP13N10L

FQP13N10L Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±20 12.8 9.05 51.2 PD Total Dissipation 65 Tj Operating Junction T

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Datasheet Details

Part number
FQP13N10L
Manufacturer
INCHANGE
File Size
202.45 KB
Datasheet
FQP13N10L-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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