FQP13N10L
Overview
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
- 12.8 A, 100 V, RDS(on) = 180 mΩ (Max.) @ VGS = 10 V, ID = 6.4 A
- Low Gate Charge (Typ. 8.7 nC)
- Low Crss (Typ. 20 pF)
- 100% Avalanche Tested
- 175°C Maximum Junction Temperature Rating
- GDS TO-220 G
