FQP13N10L Datasheet N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQP13N10L — N-Channel QFET® MOSFET FQP13N10L N-Channel QFET® MOSFET 100 V, 12.

Datasheet Details

Part number	FQP13N10L
Manufacturer	Fairchild (now onsemi)
File Size	1.10 MB
Description	N-Channel MOSFET
Datasheet	FQP13N10L_FairchildSemiconductor.pdf

General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.

These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Key Features

12.8 A, 100 V, RDS(on) = 180 mΩ (Max. ) @ VGS = 10 V, ID = 6.4 A.
Low Gate Charge (Typ. 8.7 nC).
Low Crss (Typ. 20 pF).
100% Avalanche Tested.
175°C Maximum Junction Temperature Rating D GDS TO-220 G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Sou.

FQP13N10L Distributor

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