| Part Number | FQP13N10L Datasheet |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Overview |
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to .
* 12.8 A, 100 V, RDS(on) = 180 mΩ (Max.) @ VGS = 10 V, ID = 6.4 A * Low Gate Charge (Typ. 8.7 nC) * Low Crss (Typ. 20 pF) * 100% Avalanche Tested * 175°C Maximum Junction Temperature Rating D GDS TO-220 G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IA. |
FQP13N10L Datasheet and Specifications PDF
The FQP13N10L is a N-Channel MOSFET.
| Part Number | FQP13N10L Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
·FEATURES ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
I.
*With low gate drive requirements *Easy to drive *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor FQP13N10L *APPLICATIONS *Switching applications *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Dra. |