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Fairchild Semiconductor Electronic Components Datasheet

FQP19N20C Datasheet

200V N-Channel MOSFET

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FQP19N20C / FQPF19N20C
N-Channel QFET® MOSFET
200 V, 19 A, 170 mΩ
November 2013
Features
• 19 A, 200 V, RDS(on) = 170 m(Max.) @ VGS = 10 V,
ID = 9.5 A
• Low Gate Charge (Typ. 40.5 nC)
• Low Crss (Typ. 85 pF)
• 100% Avalanche Tested
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
active power factor correction (PFC), and electronic lamp
ballasts.
D
GDS
TO-220
G
GDS TO-220F
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient, Max
FQP19N20C FQPF19N20C
200
19.0 19.0 *
12.1 12.1 *
76.0 76.0 *
± 30
433
19.0
13.9
5.5
139 43
1.11 0.34
-55 to +150
300
FQP19N20C
0.9
62.5
FQPF19N20C
2.89
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
©2004 Fairchild Semiconductor Corporation
FQP19N20C / FQPF19N20C Rev. C1
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FQP19N20C Datasheet

200V N-Channel MOSFET

No Preview Available !

Package Marking and Ordering Information
Device Marking
FQP19N20C
FQPF19N20C
Device
FQP19N20C
FQPF19N20C
Package
TO-220
TO-220F
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Reel Size
Tube
Tube
Tape Width
N/A
N/A
Quantity
50 units
50 units
Min Typ Max Unit
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coeffi-
cient
IDSS
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 μA
ID = 250 μA, Referenced to 25°C
VDS = 200 V, VGS = 0 V
VDS = 160 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 μA
VGS = 10 V, ID = 9.5 A
VDS = 40 V, ID = 9.5 A
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 100 V, ID = 19.0 A,
RG = 25 Ω
VDS = 160 V, ID = 19.0 A,
VGS = 10 V
(Note 4)
(Note 4)
200
--
--
--
--
--
2.0
--
--
--
--
--
--
--
--
--
--
--
--
-- -- V
0.24 -- V/°C
-- 10 μA
-- 100 μA
-- 100 nA
--
-100
nA
-- 4.0
0.14 0.17
10.8 --
V
Ω
S
830 1080
195 255
85 110
pF
pF
pF
15 40
150 310
135 280
115 240
40.5 53.0
6.0 --
22.5 --
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 19.0 A
trr Reverse Recovery Time
VGS = 0 V, IS = 19.0 A,
Qrr Reverse Recovery Charge
dIF / dt = 100 A/μs
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. L = 1.8 mH, IAS = 19.0 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD 19.0 A, di/dt 300 A/μs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.
-- -- 19.0 A
-- -- 76.0 A
-- -- 1.5 V
-- 208 -- ns
-- 1.63 -- μC
©2004 Fairchild Semiconductor Corporation
FQP19N20C / FQPF19N20C Rev. C1
2
www.fairchildsemi.com


Part Number FQP19N20C
Description 200V N-Channel MOSFET
Maker Fairchild Semiconductor
Total Page 10 Pages
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