FQP32N12V2 mosfet equivalent, 120v n-channel mosfet.
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* 32 A, 120V, RDS(on) = 0.05Ω @VGS = 10 V Low gate charge ( typical 41 nC) Low Crss ( typical 70 pF) Fast switching 100% avalanche teste.
lowest Rds(on) is required.
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Features
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* 32 A, 120V, RDS(on) = 0.05Ω @VGS = 10 V Low.
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.
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