Datasheet4U Logo Datasheet4U.com

FQP4P25 - 250V P-Channel MOSFET

Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • -4.0A, -250V, RDS(on) = 2.1Ω @VGS = -10 V Low gate charge ( typical 10 nC) Low Crss ( typical 10.3 pF) Fast switching 100% avalanche tested Improved dv/dt capability S !.
  • G! G ▶ ▲.
  • DS TO-220 FQP Series ! D Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C.

📥 Download Datasheet

Datasheet preview – FQP4P25

Datasheet Details

Part number FQP4P25
Manufacturer Fairchild Semiconductor
File Size 568.69 KB
Description 250V P-Channel MOSFET
Datasheet download datasheet FQP4P25 Datasheet
Additional preview pages of the FQP4P25 datasheet.

📁 Similar Datasheet

  • FQP47P06 - P-Channel MOSFET (ON Semiconductor)
  • FQP4N60 - 4A N-Channel MOSFET (Oucan Semi)
  • FQP4N60C - N-Channel MOSFET (HAOHAI)
  • FQP4N65 - 4A N-Channel MOSFET (Oucan Semi)
  • FQP10N20 - N-Channel 200V MOSFET (VBsemi)
  • FQP10N20C - N-Channel MOSFET (INCHANGE)
  • FQP10N60 - N-Channel MOSFET (Oucan Semi)
  • FQP10N65 - 10A N-Channel MOSFET (Oucan Semi)
  • FQP12N50 - 12A N-Channel MOSFET (Oucan Semi)
  • FQP12N60 - 12A N-Channel MOSFET (Oucan Semi)
Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
FQP4P25 December 2000 QFET FQP4P25 250V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters. TM Features • • • • • • -4.0A, -250V, RDS(on) = 2.1Ω @VGS = -10 V Low gate charge ( typical 10 nC) Low Crss ( typical 10.
Published: |