*
*
*
*
*
* 1.7A, 900V, RDS(on) = 5.8 Ω @ VGS = 10 V Low gate charge ( typical 15 nC) Low Crss ( typical 6.5 pF) Fast switching 100% avalanche tes.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

FQPF2N30

FQPF2N40

FQPF2N50

FQPF2N60

FQPF2N60C

FQPF2N70

FQPF2N80

FQPF2N80YDTU

FQPF2N90

FQPF20N06

FQPF20N06L

FQPF20N60

FQPF22N30