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* 17.5A, 200V, RDS(on) = 0.075Ω @VGS = 10 V Low gate charge ( typical 55 nC) Low Crss ( typical 52 pF) Fast switching 100% avalanc.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

FQPF34N20

FQPF30N06

FQPF30N06L

FQPF32N12V2

FQPF32N20C

FQPF33N10

FQPF33N10L

FQPF3N25

FQPF3N30

FQPF3N40

FQPF3N50C

FQPF3N60

FQPF3N80