FQT1N80 mosfet equivalent, n-channel mosfet.
* RDS(on) = 15.5Ω (Typ.)@ VGS = 10V, ID = 0.1A * Low gate charge ( Typ. 5.5nC) * Low Crss ( Typ. 2.7pF) * Fast switching * 100% avalanche tested *.
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