FQT1N80TF Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficient switched mode power supplies and...
FQT1N80TF Key Features
- RDS(on) = 15.5Ω (Typ.)@ VGS = 10V, ID = 0.1A
- Low gate charge ( Typ. 5.5nC)
- Low Crss ( Typ. 2.7pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- RoHS pliant
- Derate above 25oC -Continuous (TC = 25oC) -Continuous (TC = 100oC)
- When mounted on the minimum pad size remended (PCB Mount)
- 15.5 0.75