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FQT1N80TF Datasheet N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQT1N80TF_WS N-Channel MOSFET August 2011 QFET FQT1N80TF_WS N-Channel MOSFET 800V, 0.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.

These devices are well suited for high efficient switched mode power supplies and active power factor correction.

Key Features

  • RDS(on) = 15.5Ω (Typ. )@ VGS = 10V, ID = 0.1A.
  • Low gate charge ( Typ. 5.5nC).
  • Low Crss ( Typ. 2.7pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • RoHS compliant ®.

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