FQT1N80TF Datasheet | Fairchild Semiconductor

FQT1N80TF_WS N-Channel MOSFET August 2011 QFET FQT1N80TF_WS N-Channel MOSFET 800V, 0.2A, 20Ω Features - RDS(on) = 15.5Ω (Typ.)@ VGS = 10V, ID = 0.1A - Low gate charge ( Typ. 5.5nC) - Low Crss ( Typ. 2.7pF) - Fast switching - 100% avalanche tested - Improved dv/dt capability - RoHS pliant ® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficient...