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FQT2P25 Datasheet 250v P-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQT2P25 — P-Channel QFET® MOSFET FQT2P25 P-Channel QFET® MOSFET -250 V, -0.55 A, 4.

General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.

These devices are well suited for high efficiency switching DC/DC converters.

Key Features

  • -0.55 A, -250 V, RDS(on) = 4.0 Ω (Max. ) @ VGS = -10 V, ID = -0.275 A.
  • Low Gate Charge (Typ. 6.5 nC).
  • Low Crss (Typ. 6.5 pF).
  • 100% Avalanche Tested D SOT-223 S D G D G D S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) Gate-Source Voltage Single Pulse.

More Datasheets from Fairchild (now onsemi)

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FQT2P25 Distributor