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FQT2P25 - 250V P-Channel MOSFET

Datasheet Summary

Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • -0.55 A, -250 V, RDS(on) = 4.0 Ω (Max. ) @ VGS = -10 V, ID = -0.275 A.
  • Low Gate Charge (Typ. 6.5 nC).
  • Low Crss (Typ. 6.5 pF).
  • 100% Avalanche Tested D SOT-223 S D G D G D S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) Gate-Source Voltage Single Pulse.

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Datasheet Details

Part number FQT2P25
Manufacturer Fairchild Semiconductor
File Size 896.68 KB
Description 250V P-Channel MOSFET
Datasheet download datasheet FQT2P25 Datasheet
Additional preview pages of the FQT2P25 datasheet.

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Full PDF Text Transcription

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FQT2P25 — P-Channel QFET® MOSFET FQT2P25 P-Channel QFET® MOSFET -250 V, -0.55 A, 4.0 Ω November 2013 Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters. Features • -0.55 A, -250 V, RDS(on) = 4.0 Ω (Max.) @ VGS = -10 V, ID = -0.275 A • Low Gate Charge (Typ. 6.5 nC) • Low Crss (Typ. 6.5 pF) • 100% Avalanche Tested D SOT-223 S D G D G D S Absolute Maximum Ratings TC = 25oC unless otherwise noted.
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