Datasheet Summary
FQT1N80 N-Channel MOSFET
November 2007
QFET
N-Channel MOSFET
800V, 0.2A, 20Ω Features
- RDS(on) = 15.5Ω (Typ.)@ VGS = 10V, ID = 0.1A
- Low gate charge ( Typ. 5.5nC)
- Low Crss ( Typ. 2.7pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- RoHS pliant
®
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficient switched...