Datasheet4U Logo Datasheet4U.com

FQT1N80 - N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Key Features

  • RDS(on) = 15.5Ω (Typ. )@ VGS = 10V, ID = 0.1A.
  • Low gate charge ( Typ. 5.5nC).
  • Low Crss ( Typ. 2.7pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • RoHS compliant ®.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FQT5P10 P-Channel MOSFET VBsemi

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FQT1N80TF N-Channel MOSFET
FQT1N60C N-Channel QFET MOSFET
FQT13N06 60V N-Channel MOSFET
FQT13N06L 60V LOGIC N-Channel MOSFET
FQT2P25 250V P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FQT1N80 N-Channel MOSFET November 2007 QFET FQT1N80 N-Channel MOSFET 800V, 0.2A, 20Ω Features • RDS(on) = 15.5Ω (Typ.)@ VGS = 10V, ID = 0.1A • Low gate charge ( Typ. 5.5nC) • Low Crss ( Typ. 2.7pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant ® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.