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FQT1N80 - N-Channel MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • RDS(on) = 15.5Ω (Typ. )@ VGS = 10V, ID = 0.1A.
  • Low gate charge ( Typ. 5.5nC).
  • Low Crss ( Typ. 2.7pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • RoHS compliant ®.

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Datasheet Details

Part number FQT1N80
Manufacturer Fairchild Semiconductor
File Size 830.55 KB
Description N-Channel MOSFET
Datasheet download datasheet FQT1N80 Datasheet
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FQT1N80 N-Channel MOSFET November 2007 QFET FQT1N80 N-Channel MOSFET 800V, 0.2A, 20Ω Features • RDS(on) = 15.5Ω (Typ.)@ VGS = 10V, ID = 0.1A • Low gate charge ( Typ. 5.5nC) • Low Crss ( Typ. 2.7pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant ® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
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