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FQT5N20 - N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 1.0A, 200V, RDS(on) = 1.2Ω @VGS = 10 V Low gate charge ( typical 6.0 nC) Low Crss ( typical 6.0 pF) Fast switching Improved dv/dt capability D ! D " S G G! ! " " " SOT-223 FQT Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 70°C) Drain Current - Pulsed (Note 1) FQT5N20 2.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com FQT5N20 May 2001 QFET FQT5N20 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, DC-AC converters for uninterrupted power supply, motor control. TM Features • • • • • 1.0A, 200V, RDS(on) = 1.2Ω @VGS = 10 V Low gate charge ( typical 6.0 nC) Low Crss ( typical 6.
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