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Fairchild Semiconductor Electronic Components Datasheet

FZT3019 Datasheet

NPN General Purpose Amplifier

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FZT3019
NPN General Purpose Amplifier
• This device is designed for general purpose medium power amplifiers
and switches requiring collector currents to 500 mA and collector
voltages up to 80 V.
• Sourced from process 12.
4
3
2
1 SOT-223
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings* Ta=25°C unless otherwise noted
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC Collector Current
- Continuous
TJ, TSTG
Operating and Storage Junction Temperature Range
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Ratings
80
140
7.0
7.0
-55 ~ 150
Units
V
V
V
mA
°C
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
Collector-Emitter Sustaining Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
IEBO
Emitter-Cutoff Current
On Characteristics
IC = 30 mA, IB = 0
IC = 100 µA, IE = 0
IE = 100 µA, IC = 0
VCB = 90 V, IE = 0
VCB = 90 V, IE = 0, Ta = 150°C
hFE DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
Small Signal Characteristics
IC = 0.1 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 150 mA, VCE = 10 V
IC = 500 mA, VCE = 10 V
IC = 1.0 A, VCE = 10 V
IC = 500 mA, IB = 15 V
IC = 1.0 A, IB = 50 V
IC = 10 mA, IB = 15 V
fT
Ccob
Cibo
hfe
Current Gain - Bandwidth Product
Collector-Base Capacitance
Input Capacitance
Small Signal current Gain
IC = 50 mA, VCE = 10 V, f = 20 MHz
VCB = 10 V, IE = 0, f = 1.0 MHz
VBE = 10 V, IE = 0, f = 1.0 MHz
IC = 50 mA, VCE = 10 V,
f = 20 MHz
rb’Cc
NF
Collector Base Time Constant
Noise Figure
* Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
IC = 10 mA, VCB = 10 V, f = 4.0 MHz
IC = 100 mA, VCE = 10 V,
RS = 1.0k, f = 1.0KHz
Min.
80
40
7.0
50
90
100
50
15
100
80
Max.
0.01
10
0.01
300
0.2
0.5
1.1
12
60
400
400
4.0
Units
V
V
V
µA
µA
µA
V
V
V
MHz
pF
pF
pS
dB
©2004 Fairchild Semiconductor Corporation
Rev. A, April 2004


Fairchild Semiconductor Electronic Components Datasheet

FZT3019 Datasheet

NPN General Purpose Amplifier

No Preview Available !

Thermal Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
PD Total Device Dissipation
Derate above 25°C
RθJA
Thermal Resistance, Junction to Ambient
Max.
1.0
8.0
125
Units
W
mW/°C
°C/W
©2004 Fairchild Semiconductor Corporation
Rev. A, April 2004


Part Number FZT3019
Description NPN General Purpose Amplifier
Maker Fairchild Semiconductor
Total Page 4 Pages
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