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FZT649
Discrete Power & Signal Technologies July 1998
FZT649
C E
B
C
SOT-223
NPN Low Saturation Transistor
These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous.
Absolute Maximum Ratings*
Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25°C unless otherwise noted
FZT649 25 35 5 3 -55 to +150
Units V V V A °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits.
FZT649 Datasheet
