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G60N100BNTD Datasheet, Fairchild Semiconductor

G60N100BNTD Datasheet, Fairchild Semiconductor

G60N100BNTD

datasheet Download (Size : 417.80KB)

G60N100BNTD Datasheet

G60N100BNTD igbt

npt igbt.

G60N100BNTD

datasheet Download (Size : 417.80KB)

G60N100BNTD Datasheet

G60N100BNTD Features and benefits

G60N100BNTD Features and benefits


* High Speed Switching
* Low Saturation Voltage: VCE(sat) = 2.5 V @ IC = 60 A
* High Input Impedance
* Built-in Fast Recovery Diode Applications
* UPS.

G60N100BNTD Application

G60N100BNTD Application


* UPS, Welder March 2014 General Description Using Fairchild's proprietary trench design and advanced NPT technolog.

G60N100BNTD Description

G60N100BNTD Description

Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for h.

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TAGS

G60N100BNTD
NPT
IGBT
Fairchild Semiconductor

Manufacturer


Fairchild Semiconductor

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