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HGT1S11N120CNS Datasheet, Fairchild Semiconductor

HGT1S11N120CNS igbt equivalent, n-channel igbt.

HGT1S11N120CNS Avg. rating / M : 1.0 rating-11

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HGT1S11N120CNS Datasheet

Features and benefits

of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT is ideal fo.

Application

operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power su.

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