HGT1S14N36G3VL Datasheet, Fairchild Semiconductor

* Logic Level Gate Drive
* Internal Voltage Clamp
* ESD Gate Protection
* TJ = 175 C
* Ignition Energy Capable o Description This N-Channel IGBT is a.

with virtually no damage problems due to electrostatic discharge. IGBT’s can be handled safely if the following basic p.

This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Cla.