HGT1S20N60C3S
features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25o C and 150o C. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly developmental type TA49178.
Features
- 45A, 600V, TC = 25o C
- 600V Switching SOA Capability
- Typical Fall Time-
- - . 108ns at TJ = 150o C
- Short Circuit Rating
- Low Conduction Loss
- Related Literature
- TB334 “Guidelines for Soldering Surface Mount ponents to PC Boards”
Packaging
JEDEC STYLE TO-247
Ordering Information
PART NUMBER HGTG20N60C3 HGTP20N60C3 HGT1S20N60C3S PACKAGE TO-247 TO-220AB TO-263AB BRAND G20N60C3 G20N60C3 G20N60C3
COLLECTOR (FLANGE)
NOTE:...
