of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower o.

operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power su.

The HGTD3N60C3 and HGTD3N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar tran.

HGTD3N60C3S

HGTD3N60A4

HGTD3N60A4S

HGTD3N60B3S

HGTD10N40F1

HGTD10N40F1S

HGTD10N50F1

HGTD10N50F1S

HGTD1N120BNS

HGTD1N120CNS

HGTD2N120BNS

HGTD2N120CNS

HGTD6N40E1