HGTD3N60C3S - 6A/ 600V/ UFS Series N-Channel IGBTs

Product Overview

Fairchild Semiconductor

Part number	HGTD3N60C3S
Manufacturer	Fairchild Semiconductor
File Size	227.94 KB
Description	6A/ 600V/ UFS Series N-Channel IGBTs
Datasheet	HGTD3N60C3S Datasheet
Additional preview pages of the HGTD3N60C3S datasheet.

The HGTD3N60C3 and HGTD3N60C3S are MOS gated high voltage switching devices combining the best

of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching.

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Published: Mar 23, 2005 |