HGTD3N60C3S Datasheet 6a/ 600v/ Ufs Series N-channel IGBTs

Manufacturer: Fairchild (now onsemi)

Overview: S E M I C O N D U C T O R HGTD3N60C3, HGTD3N60C3S 6A, 600V, UFS Series N-Channel.

Datasheet Details

Part number	HGTD3N60C3S
Manufacturer	Fairchild (now onsemi)
File Size	227.94 KB
Description	6A/ 600V/ UFS Series N-Channel IGBTs
Datasheet	HGTD3N60C3S_FairchildSemiconductor.pdf

General Description

The HGTD3N60C3 and HGTD3N60C3S are MOS gated high voltage switching devices combining the best

Key Features

of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching.

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Similar Datasheet

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