HGTD3N60C3 - 6A/ 600V/ UFS Series N-Channel IGBTs
HGTD3N60C3 Features
* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications
