HGTD3N60C3S - 6A/ 600V/ UFS Series N-Channel IGBTs

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Intersil Corporation

Part number	HGTD3N60C3S
Manufacturer	Intersil Corporation
File Size	243.35 KB
Description	6A/ 600V/ UFS Series N-Channel IGBTs
Datasheet	HGTD3N60C3S Datasheet
Additional preview pages of the HGTD3N60C3S datasheet.

of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching.

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Published: Mar 23, 2005 |