HGTD3N60C3S Datasheet, Igbts, Intersil Corporation

HGTD3N60C3S Features

• Igbts of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage

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HGTD3N60C3S

Manufacturer:

Intersil Corporation

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243.35kb

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📄 Datasheet

Description:

6a/ 600v/ ufs series n-channel igbts.

HGTD3N60C3S Application

• Applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and driv

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HGTD3N60C3S

Intersil Corporation

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