HGTD3N60A4 Datasheet, Igbt, Fairchild Semiconductor

HGTD3N60A4 Features

• Igbt of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage

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Part number:

HGTD3N60A4

Manufacturer:

Fairchild Semiconductor

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189.33kb

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📄 Datasheet

Description:

600v/ smps series n-channel igbt.

HGTD3N60A4 Application

• Applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode

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HGTD3N60A4

Fairchild Semiconductor

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