* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications
HGTD3N60A4 Datasheet (189.33 KB)
HGTD3N60A4
Fairchild Semiconductor
189.33 KB
600v/ smps series n-channel igbt.
HGTD3N60A4S, HGTP3N60A4
Data Sheet August 2003
600V, SMPS Series N-Channel IGBT
The HGTD3N60A4S and the HGTP3N60A4 are MOS gated high voltage switchi.
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