* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications
HGTD7N60C3S Datasheet (192.70 KB)
HGTD7N60C3S
Fairchild Semiconductor
192.70 KB
Ufs series n-channel igbts.
Data Sheet HGTD7N60C3S, HGTP7N60C3 December 2001 14A, 600V, UFS Series N-Channel IGBTs The HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage swi.
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