HGTD10N50F1S Datasheet - Intersil Corporation

HGTD10N50F1S 10A/ 400V and 500V N-Channel IGBTs

The HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, and HGTD10N50F1S are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from low power integr.

HGTD10N50F1S Features

* 10A, 400V and 500V

* VCE(ON) 2.5V Max.

* TFALL ≤1.4µs

* Low On-State Voltage

* Fast Switching Speeds

* High Input Impedance Applications

* Power Supplies

* Motor Drives

* Protective Circuits COLLECTOR (FLANGE) GATE EMITTER H

HGTD10N50F1S_IntersilCorporation.pdf

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Datasheet Details

Part number:

HGTD10N50F1S

Manufacturer:

Intersil Corporation

File Size:

33.07 KB

Description:

10a/ 400v and 500v n-channel igbts.

HGTD10N50F1S Distributor

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HGTD10N50F1S HGTD10N50F1S 10A 400V and 500V N-Channel IGBTs Intersil Corporation