HGTD10N50F1S - 10A/ 400V and 500V N-Channel IGBTs
The HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, and HGTD10N50F1S are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers.
These types can be operated directly from low power integr
HGTD10N50F1S Features
* 10A, 400V and 500V
* VCE(ON) 2.5V Max.
* TFALL ≤1.4µs
* Low On-State Voltage
* Fast Switching Speeds
* High Input Impedance Applications
* Power Supplies
* Motor Drives
* Protective Circuits COLLECTOR (FLANGE) GATE EMITTER H
